Intersublevel transitions in self-assembled semiconductor quantum dots are optical transitions between discrete confined levels originating from the same band. These transitions are resonant in the mid- or far-infrared spectral range and their energies depend on the quantum dot size, shape and composition. InAs/GaAs self-assembled quantum dots with typical 20 nm in-plane dimension and typical 4 nm height exhibit conduction intersublevel transitions between 5-8 µm (bound-to-continuum transitions) and 8-20 µm (bound-to-bound transitions).
Significant advances have been reported over the past years in this field. These advances cover mid-infrared (magneto)spectroscopy, evidence of strong coupling regime and formation of polarons, quantum dot dynamics (T1 and T2) in single and doubly charged quantum dots, quantum dot infrared photodetector, intersublevel emission, single quantum dot spectroscopy...
The intersublevel studies in the mid-infrared provide a unique opportunity to confront experimental results and quantum dot modeling of electronic structure based on realistic structural parameters. Intersublevel studies offer moreover new opportunities to develop semiconductor-based optoelectronic devices for the mid-infrared spectral range
The aim of this workshop is to provide a forum of discussion for the community working in or interested by the field of intersublevel transitions in semiconductor quantum dots. It will also be open to scientists working on the modeling of the quantum dots or on the characterization of the dots. Scientists working on large scale facilities like free-electron lasers will be welcome to attend.
First SANDiE Workshop on
Intersublevel studies
in self-assembled semiconductor quantum dots
2 - 3 April 2008
Paris, France
Last updated
11-Mar-2008
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